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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB860
DESCRIPTION With TO-220C package Complement to type 2SD1137 APPLICATIONS Low frequency power amplifier TV vertical deflection output applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP

PARAMETER
CONDITIONS Open emitter
Collector-base voltage Collector-emitter voltage
IN
Emitter-base voltage
Collector current
HAN C
SEM GE
Open base Ta=25ae
OND IC
TOR UC
VALUE -100 -100 -4 -4 -5 1.8
UNIT V V V A A
Open collector
Collector current-Peak
PC
Collector power dissipation TC=25ae 40 150 -45~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB860
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; RBE= IE=-1mA; IC=0 IC=-1 A;IB=-0.1 A VCE=-80V; RBE= VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 -1.0 -100 -50 250 350 TYP. MAX UNIT V V V
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-2

HAN INC
SEM GE
OND IC
TOR UC
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB860
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB860
SEM GE
HAN INC
OND IC
TOR UC
4


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